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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2066
DESCRIPTION *With TO-3PN package *Wide area of safe operation *Complement to type 2SB1373 APPLICATIONS *For high power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 120 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 160 160 5 12 2.5 W UNIT V V V A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA; IB=0 IC=8A; IB=0.8A IC=8A;VCE=5V VCB=160V; IE=0 VEB=5V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=8A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 20 60 15 MIN 160
2SD2066
SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB
TYP.
MAX
UNIT V
2.0 1.8 50 50
V V A A
200
20 210
MHz pF
hFE-2 Classifications Q 60-120 P 100-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2066
Fig.2 outline dimensions
3


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